Si6924AEDQ
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
*D
*D
TSSOP-8
G 1
3.3 k Ω
G 2
3.3 k Ω
D
1
8 D
S 1
S 1
G 1
2
3
4
Si6924AEDQ
Top View
7 S 2
6 S 2
5 G 2
N-Channel
S 1
N-Channel
S 2
Ordering Information: Si6924AEDQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
Figure 3.
*Thermal connection to drain pins is required to achieve specific performance.
Figure 4.
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage, Source-Drain Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
28
± 14
Unit
V
Continuous Drain-to-Source Current (T J = 150 °C) a
Pulsed Drain-to-Source Current
T A = 25 °C
T A = 70 °C
I D
I DM
4.6
3.7
20
4.1
3.2
A
Pulsed Source Current (Diode Conduction) a
I S
1.2
0.9
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 70 °C
P D
T J , T stg
1.3
0.84
- 55 to 150
1.0
0.64
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJF
71
96
56
95
125
70
°C/W
Notes:
a. Surface Mounted on FR4 board.
www.vishay.com
2
Document Number: 72215
S-81056-Rev. B, 12-May-08
相关PDF资料
SI6926ADQ-T1-GE3 MOSFET DL N-CH 20V 4.5A 8-TSSOP
SI6928DQ-T1-GE3 MOSFET DL N-CH 30V 4A 8-TSSOP
SI6933DQ-T1-GE3 MOSFET P-CH D-S 30V 8-TSSOP
SI6955ADQ-T1-GE3 MOSFET P-CH D-S 30V 8-TSSOP
SI6966DQ-T1-GE3 MOSFET N-CH DUAL G-S 20V 8TSSOP
SI6966EDQ-T1-GE3 MOSFET N-CH DUAL G-S 20V 8TSSOP
SI6967DQ-T1-GE3 MOSFET P-CH DUAL G-S 8V 8TSSOP
SI6969BDQ-T1-GE3 MOSFET P-CH DUAL G-S 12V 8TSSOP
相关代理商/技术参数
SI6924EDQ 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 2.5-V (G-S) Battery Switch, ESD Protection
SI6924EDQ-T1 功能描述:MOSFET 28V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6925ADQ 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 2.5-V (G-S) MOSFET
SI6925ADQ_08 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 2.5-V (G-S) MOSFET
SI6925ADQ-T1-E3 功能描述:MOSFET 20V 3.9A 0.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6925ADQ-T1-GE3 功能描述:MOSFET 20V 3.9A 1.13W 45mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI6925DQ 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 2.5-V (G-S) MOSFET
SI6925DQ-T1 功能描述:MOSFET 20V 3.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube